microwave corporation 8 - 286 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC481ST89 sige hbt gain block mmic amplifier, dc - 5.0 ghz v00.0204 general description features functional diagram the HMC481ST89 is a sige heterojunction bipolar transistor (hbt) gain block mmic smt ampli er covering dc to 5 ghz. packaged in an industry standard sot89, the ampli er can be used as a cascadable 50 ohm rf/if gain stage as well as a lo or pa driver with up to +21 dbm output power. the HMC481ST89 offers 20 db of gain with a +33 dbm output ip3 at 1 ghz while requiring only 79 ma from a single positive supply. the darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +19 dbm gain: 20 db output ip3: +33 dbm cascadable 50 ohm i/os single supply: +6v to +12v industry standard sot89 package typical applications the HMC481ST89 is an ideal rf/if gain block & lo or pa driver for: ?cellular / pcs / 3g ?fixed wireless & wlan ?catv, cable modem & dbs ?microwave radio & test equipment electrical speci cations, vs= 8.0 v, rbias= 39 ohm, t a = +25?c note: data taken with broadband bias tee on device output. parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 4.0 - 5.0 ghz 18 15.5 13 11 9 20 17.5 15 13 11 db db db db db gain variation over temperature dc - 5.0 ghz 0.008 0.016 db/ ? input return loss dc - 1.0 ghz 1.0 - 5.0 ghz 12 15 db db output return loss dc - 1.0 ghz 1.0 - 4.0 ghz 4.0 - 5.0 ghz 17 27 23 db db db reverse isolation dc - 5.0 ghz 18 db output power for 1 db compression (p1db) 0.5 - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 4.0 - 5.0 ghz 16 15 13 11 9 19 18 16 14 12 dbm dbm dbm dbm dbm output third order intercept (ip3) (pout= 0 dbm per tone, 1 mhz spacing) 0.5 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 4.0 - 5.0 ghz 33 30 27 25 dbm dbm dbm dbm noise figure dc - 4.0 ghz 4.0 - 5.0 ghz 3.5 4.0 db db supply current (icq) 79 ma
microwave corporation 8 - 287 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC481ST89 output return loss vs. temperature v00.0204 broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature sige hbt gain block mmic amplifier, dc - 5.0 ghz noise figure vs. temperature -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 012345678 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 0123456 +25c +85c -40c gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c input return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c output return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 0123456 +25c +85c -40c noise figure (db) frequency (ghz)
microwave corporation 8 - 288 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC481ST89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz gain, power & oip3 vs. supply voltage for constant icc= 79 ma @ 850 mhz p1db vs. temperature psat vs. temperature output ip3 vs. temperature vcc vs. icc over temperature for fixed vs= 8v, r bias = 39 ohms 4 6 8 10 12 14 16 18 20 22 24 0123456 +25c +85c -40c p1db (dbm) frequency (ghz) 4 6 8 10 12 14 16 18 20 22 24 0123456 +25c +85c -40c psat (dbm) frequency (ghz) 18 20 22 24 26 28 30 32 34 36 0123456 +25c +85c -40c oip3 (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 6789101112 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs ( vdc ) 66 68 70 72 74 76 78 80 82 84 86 88 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 icc (ma) vcc (vdc) +85 c +25 c -40 c
microwave corporation 8 - 289 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC481ST89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz outline drawing absolute maximum ratings collector bias voltage (vcc) +6.0 vdc rf input power (rfin)(vcc = +5 vdc) +17 dbm junction temperature 150 ? continuous pdiss (t = 85 ?) (derate 16.3 mw/? above 85 ?) 1.06 w thermal resistance (junction to lead) 61.4 ?/w storage temperature -65 to +150 ? operating temperature -40 to +85 ? notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. leadframe material: copper alloy 3. leadframe plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. all ground leads must be soldered to pcb rf ground. 7. the micro-p package is dimensionally compatable with the ?icro-x package
microwave corporation 8 - 290 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC481ST89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz application circuit pin descriptions pin number function description interface schematic 1 rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 3 rfout rf output and dc bias (vcc) for the output stage. 2, 4 gnd these pins and package bottom must be connected to rf/dc ground. recommended component values for key application frequencies component frequency (mhz) 50 900 1900 2200 2400 3500 5000 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 6.8 nh c1, c2 0.01 ? 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. external blocking capacitors are required on rfin and rfout. 2. r bias provides dc bias stability over temperature. recommended bias resistor values for icc= 79 ma, rbias= (vs - vcc) / icc supply voltage (vs) 6v 8v 10v 12v r bias v alue 11 ? 39 ? 62 ? 91 ? r bias p ower r ating 1/8 w 1/4 w 1/2 w 1 w
microwave corporation 8 - 291 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC481ST89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108324* item description j1 - j2 pc mount sma connector j3 - j4 dc pin c1, c2 capacitor, 0402 pkg. c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 ? capacitor, tantalum r1 resistor, 1210 pkg. l1 inductor, 0603 pkg. u1 HMC481ST89 pcb** 107368 evaluation pcb ** circuit board material: rogers 4350 * reference this number when ordering complete evaluation pcb.
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